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| Ordering number : ENN7422 2SK3614 N-Channel Silicon MOSFET 2SK3614 UltraHigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2062A [2SK3614] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings 60 20 4 16 1.5 3.5 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=2A, VGS=4V Ratings min 60 1 10 1.2 2 3.6 110 150 145 215 2.6 typ max Unit V A A V S m m Marking : LK Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91603 TS IM TA-3952 No.7422-1/4 2SK3614 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=4A VDS=30V, VGS=10V, ID=4A VDS=30V, VGS=10V, ID=4A IS=4A, VGS=0 Ratings min typ 300 54 34 8 16 32 34 7.8 2.4 1.7 0.86 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 10V 0V VIN VDD=30V ID=2A RL=15 VOUT D PW=10s D.C.1% G 2SK3614 P.G 50 S 6 ID -- VDS 6. 5.0 8 ID -- VGS --25 0V V8 .0 Drain Current, ID -- A 4 Drain Current, ID -- A 10 = VGS 6 5 4 3 2 3 2 .0 Tc =7 5 C 1 0 0 0.2 0.4 0.6 0.8 1.0 IT05833 300 0 0 1 2 --25 C 1 25 C 3 4 25 C 5 V 4.0 3.5V Tc= 5 V 7 75 C V VDS=10V C 6 IT05834 Drain-to-Source Voltage, VDS -- V 300 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 Tc=25C ID=2A 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 --60 2 I D= VG A, 4V S= V 2A, I D= =10 VGS 18 20 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT05835 Case Temperature, Tc -- C IT05836 No.7422-2/4 2SK3614 10 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 IF -- VSD VGS=0 Forward Drain Current, IF -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05838 1.0 7 5 3 2 C 5 --2 5C = 7 Tc C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.1 0.01 Drain Current, ID -- A 100 7 5 7 10 IT05837 1000 7 5 SW Time -- ID VDD=30V VGS=10V Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 td(off) tf Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 td(on) tr 100 7 5 3 2 1.0 0.1 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT05839 3 2 10 7 5 7 0 5 10 Tc=7 5 15 C 25C --25 C Ciss Coss Crss 20 25 30 IT05840 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=4A IDP=16A ID=4A 8 Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 3 2 1.0 7 5 3 2 0.1 7 5 3 2 <10s 10 0 s 1m s 10 m DC 100 s m op s er ati on Operation in this area is limited by RDS(on). Tc=25C Single pulse 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 0.01 0.01 Total Gate Charge, Qg -- nC 2.0 IT05841 4.0 Drain-to-Source Voltage, VDS -- V 5 7 100 IT05842 PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc Allowable Power Dissipation, PD -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.5 M ou nte do na ce 1.0 ram ic bo ard (2 50 mm 0.5 2 !0 .8m m) 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT05843 Case Temperature, Tc -- C IT05844 No.7422-3/4 2SK3614 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.7422-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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